The global 3D NAND flash memory market size was USD 20.5 Bn in 2022 and is likely to reach USD 80 Bn by 2031, expanding at a CAGR of 17% during 2023–2031. The growth of the market is attributed to the increasing demand for compact forms of flash memory storage capacities.
3D NAND is a non-volatile data-storing facility that consists of memory cells stacked vertically in different layers. Memory cells form a 3D structure by stacking cells either horizontally or vertically on each side for charge conduction by NAND strings.
A flash memory cell is a logic gate, and all logic gates use a well-recognized binary input or output (I/O) exchange. Manufacturers developed 3D NAND flash memory to provide high-density storage at a less cost per bit. The technology is developed to resolve the problem of scaling 2D or planar NAND technology and to address issues in its performance.
3D NAND engages in charge trap technology rather than a floating rate, which is based on silicon nitride sheets and stores charge on each side of the flash memory. 3D NAND technology in silicon power 3D NAND secure digital card (SD card) is used for simple algorithms and increases the read or write performance by about one point three to two times faster.
3D NAND boosts performance and capacity by assembling memory cells into layers. This multiplies the availability of memory cells in an area that enables better storage capabilities while using small footmark areas. Moreover, stacking allows short connections for each memory cell. This supports fast memory performance. 3D flash is a new building approach with capacities of about 256 GB and 512 GB with applications for numerous memory devices.
The report finds that the COVID-19 pandemic declined the overall revenue of the global 3D NAND flash memory market due to the sharp decrease in the manufacturing of consumer electronics worldwide. As a part of preventive measures imposed by governments across countries for curbing the spread of the virus and the closedown of factories across industries affected the overall market production. Moreover, sudden disruptions in the supply chain, especially in the timely supply of raw materials, hampered the pricing strategy.
3D NAND Flash Memory Market Dynamics
Major Drivers
Increasing demand for solid-state drives (SSD) containing high memory storage for consumer electronics such as tablets, laptops, and smartphones is expected to drive the market during the forecast period.
3D NAND flash memory provides various advantages including improved performance, better stability & scalability, high reliability, and durability than other NAND flash memory. Additionally, with the increasing cloud-based and computing solutions, the demand for high security and reliability with cost-effective data storage facilities is expected to further drive the market.
Existing Restraints
Complex processes such as constructing tall multilayer structures, vertically interconnected cell arrays, and positioning memory cell layers for uniform thickness in the wafer for producing 3D NAND flash memory services are complex and expensive. This factor is expected to restrain the market. Moreover, availability of low-cost alternatives for 3D NAND flash memory solutions is projected to hinder the market.
Emerging Opportunities
Increasing adoption of Internet of Things (IoT) technology across various applications is projected to create lucrative opportunities in the market. Numerous manufacturers are anticipated to focus on launching updated and new memory solutions for increased scope of opportunities. Additionally, rising space limitations on the semiconductor wafer increase the demand for compact-sized flash memory storage capacities, which creates opportunities in the manufacturers.
Scope of 3D NAND Flash Memory Market Report
The report includes an assessment of the market, trends, segments, and regional markets. Overview and dynamics have also been included in the report.
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Attributes
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Details
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Report Title
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3D NAND Flash Memory Market - Global Industry Analysis, Growth, Share, Size, Trends, and Forecast
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Base Year
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2022
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Historic Data
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2016–2021
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Forecast Period
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2023–2031
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Segmentation
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Type (Single-Level Cell (SLC), Triple-Level Cell (TLC), and Multi-Level Cell (MLC)), Application (Smartphones, Tablets, Laptops, Personal Computers, Cameras, and Others), and End-user (Consumer Electronics, Healthcare, Automotive, and Others)
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Regional Scope
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Asia Pacific, North America, Latin America, Europe, and Middle East & Africa
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Report Coverage
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Company Share, Market Analysis and Size, Competitive Landscape, Growth Factors, Market Trends, and Revenue Forecast
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Key Players Covered in the Report
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SAMSUNG; KIOXIA Holdings Corporation; Micron Technology, Inc.; Integrated Silicon Solution Inc.; Western Digital Corporation; STMicroelectronics; Realtek Semiconductor Corp.; Semiconductor Components Industries, LLC; Infineon Technologies AG; and Advanced Micro Devices, Inc
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3D NAND Flash Memory Market Segment Insights
Based on type, the 3D NAND flash memory market is divided into single-level cell (SLC), triple-level cell (TLC), and multi-level cell (MLC). The TLC segment is expected to expand at a significant pace during the projection period, as it costs less per gigabyte as compared to single-level cell and multi-level cell. It has benefits such as more storage density to store more bits per cell. It triples its capacity as compared to SLC and provides one-and-a-half times more storage than MLC.
On the basis of application, the global market is segregated into smartphones, tablets, laptops, personal computers, cameras, and others. The smartphone segment is projected to register a considerable CAGR during the forecast period due to the growing demand for smartphones globally. 3D NAND flash memory in smartphones enhances the performance of web browsing, games, email loading, and social network sites, including Facebook.
With increasing usage of smartphones, companies are adding applications and features to modify their quality from other producers. The use of 3D NAND technology helps increase storage space in mobiles. Moreover, the growth in the average capacities of smartphones is driving the segment.
In terms of end-user, the 3D NAND flash memory market is categorized into consumer electronics, healthcare, automotive, and others. The consumer electronics segment is anticipated to expand at a robust pace during the forecast period, as it is a key user of the technology due to its numerous applications in tablets, laptops, smartphones, and cameras.
The healthcare segment is anticipated to grow rapidly during the forecast period, as 3D NAND flash memory offers services for increasing demand of storing a large amount of data generated from healthcare monitoring.
In terms of region, the global 3D and flash memory market is classified as Asia Pacific, North America, Latin America, Europe, and Middle East & Africa. Asia Pacific is expected to dominate the market during the projection period, due to the demand from various end-users, including smartphones in developing countries such as India, China, and Indonesia. Infrastructure development in numerous countries in the region is projected to help manufacturers expand their business, thus driving the market in Asia Pacific.
Segments
The 3D NAND flash memory market has been segmented on the basis of
Type
- Single-Level Cell (SLC)
- Triple-Level Cell (TLC)
- Multi-Level Cell (MLC)
Application
- Smartphones
- Tablets
- Laptops
- Personal Computers
- Cameras
- Others
End-user
- Consumer Electronics
- Healthcare
- Automotive
- Others
Region
- Asia Pacific
- North America
- Latin America
- Europe
- Middle East & Africa
Key Players
- SAMSUNG
- KIOXIA Holdings Corporation
- Micron Technology, Inc.
- Integrated Silicon Solution Inc.
- Western Digital Corporation
- STMicroelectronics
- Realtek Semiconductor Corp.
- Semiconductor Components Industries, LLC
- Infineon Technologies AG
- Advanced Micro Devices, Inc
Competitive Landscape
Key players operating in the global 3D NAND flash memory market include SAMSUNG; KIOXIA Holdings Corporation; Micron Technology, Inc.; Integrated Silicon Solution Inc.; Western Digital Corporation; STMicroelectronics; Realtek Semiconductor Corp.; Semiconductor Components Industries, LLC; Infineon Technologies AG; and Advanced Micro Devices, Inc. These companies adopt strategies such as acquisitions, partnerships, collaboration, mergers, R&D investments, and product launches to boost their market share. For instance,
In 2020, KIOXIA Holdings Corporation, a leading Japan-based computer memory manufacturer, announced the launch of its 162-layered Gen 6 BiCS NAND flash memory chips, with Western Digital Corporation. The project is anticipated to increase the sales of 3D NAND in Asia Pacific.
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