The global insulated-gate bipolar transistor (IGBT) market size is expected to register a considerable CAGR during the forecast period, 2021–2028. The growth of the market is attributed to increasing demand for IGBT from automobile, energy & power, rail, and consumers electronics industries.
IGBT is something of a cross between a traditional field effect transistor and a bipolar junction transistor making it ideal as a semiconductor exchanging device. IGBT transistor uses high information impedance and high exchanging rates of a field effect transistor with the low immersion voltage of a bipolar semiconductor. Further, it integrates them together to ensure proper functioning of collector emitter current with zero entryway current drive. IGBT combines the insulated gate technology of the fixed effect transistor with the output performance characteristics of a conventional bipolar transistor.
IGBT has the capacity to exchange and conduction attributes of a bipolar semiconductor. It is essentially utilized in power hardware applications, such as converters, inverters, and force supplies. High-current and high-voltage bipolar devices are easily available in the market; however their exchanging speeds are slow, while high-voltage and high-current gadgets are expensive. IGBT offers better power gain than standard bipolar transistor
Market Trends, Drivers, Restraints, and Opportunities
- Raid adoption of electric vehicles (EVs) and growing demand for renewable energy are expected to drive the market growth.
- Increasing automation and industrialization is anticipated to spur the market growth in the projected timeline.
- Rising demand for data centers due to remote working is projected to drive the market growth.
- Disruption in hardware supply chain due to Covid-19 outbreak can hinder the market growth.
- Growing government state bodies focus on carbon neutral technology can create new opportunities for the market growth.
Scope of the Report
The report on the global insulated-gate bipolar transistor market includes an assessment of the market, trends, segments, and regional markets. Overview and dynamics have also been included in the report.
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Attributes
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Details
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Report Title
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Insulated-Gate Bipolar Transistor Market - Global Industry Analysis, Growth, Share, Size, Trends, and Forecast
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Base Year
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2020
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Historic Data
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2018–2019
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Forecast Period
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2021–2028
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Segmentation
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Types (Modular IGBT and Discrete IGBT,), Power Rating (High-Power, Medium-Power, Low-Power), End-user Industry (EV/HEV, Renewables, Rail, UPS, Industrial, Motor Drives, and Commercial)
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Regional Scope
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Asia Pacific, North America, Latin America, Europe, and Middle East & Africa
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Report Coverage
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Company Share, Market Analysis and Size, Competitive Landscape, Growth Factors, and Trends, and Revenue Forecast
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Key Players Covered in the Report
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SEMIKRON International GmbH; Renesas Electronics Corporation; ROHM Co. Ltd.; Infineon Technologies AG; and Fuji Electric Co. Ltd.
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Insulated-gate Bipolar Transistor Market Segment Insights
Modular IGBT segment is expected to grow at a healthy rate
Based on types, the market is divided into modular IGBT and discrete IGBT. The modular IGBT segment is expected to grow at a healthy rate during the forecast period due to its low cost, which makes it suitable for solar inverter applications. However, the discrete IGBT segment is expected to expand at a steady rate in the projected timeline.
High voltage segment is projected to expand at a robust CAGR
On the basis of power ratings, the market is segregated into high power, medium power, low power. The high power segment is projected to expand at a robust CAGR during the forecast period. High power transistors offer high current carrying capacity and better control during fluctuations. This, in turn, increases its application areas.
EV/HEV segment is estimated to grow at a high rate
Based on end user industries, the market is bifurcated into EV/HEV, renewable, rail, ups, industrial, motor drives, and commercial. The EV/HEV is projected to account for a significant market share during the forecast period. EVs require high level of reliability, which is achieved with the help of high-quality IGBTs.
Asia Pacific is anticipated to hold a large market share
In terms of regions, the insulated-gate bipolar transistor market is classified as Asia Pacific, North America, Latin America, Europe, and Middle East & Africa. Asia Pacific is expected to constitute a key share of the market during the projected period due to increasing production of EVs and rising demand for solar panels.
Segments
Segments Covered in the Report
The insulated-gate bipolar transistor market has been segmented on the basis of
Types
- Modular IGBT
- Discrete IGBT
Power Rating
- High-Power
- Medium-Power
- Low-Power
End-user Industries
- EV/HEV
- Renewable
- Rail
- UPS
- Industrial
- Motor Drives
- Commercial
Regions
- Asia Pacific
- North America
- Latin America
- Europe
- Middle East & Africa
Key Players
- SEMIKRON International GmbH
- Renesas Electronics Corporation
- ROHM Co. Ltd.
- Infineon Technologies AG
- Fuji Electric Co. Ltd.
Competitive Landscape
Key players competing in the insulated-gate bipolar transistor(IGBT) market are SEMIKRON International GmbH; Renesas Electronics Corporation; ROHM Co. Ltd.; Infineon Technologies AG; and Fuji Electric Co. Ltd.
Industry players are focusing on decreasing the size and power consumption of inverters.
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