SiC Substrates Market Size, Share | Industry Report [2031]

Report Description

SiC Substrates Market Outlook

The global SiC Substrates Market was valued at USD 269.4 million in 2021 and is projected to reach USD 1,431.6 million by 2030, expanding at a CAGR of 20.4% during the forecast period. Silicon Carbide (SiC) substrate is a semiconductor material with unique electrical and thermal properties. This semiconductor can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminum, or gallium.

Furthermore, metallic conductivity can be achieved by heavy doping with boron, aluminum, or nitrogen.  SiC substrates can be supplied in diameter 2 inches, 4-H or 6-H polytype N-type, nitrogen-doped, and Si face polished. It can be used in GaN epitaxy devices, optoelectronic devices, high frequency devices, high power devices, high temperature devices, and light emitting diodes.

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Macro-Economic Factors

IT and Consumer Industry

Rapid growth in the IT industry, owing to the rising demand for data-centers and microgrid equipment, is fueling the demand for SiC substrates globally. The use of silicon carbide in power devices helps in improving the server power supply to increase its power density and efficiency. It aids in reducing the size of the data-center and overall cost of construction, along with achieving environmental protection.

Furthermore, growing urbanization and high demand for consumer durable products in countries such as China, India, the US, and Canada are expected to increase the demand for SiC substrates.

R&D Activities

Increasing government funding on R&D activities and rising focus of key players on technological innovations are anticipated to drive the use of SiC substrates in various sectors such as automotive, electrical & electronics, and aerospace. Major countries such as China and the US have promoted various policies for the development of SiC. In recent years, governments and industries are focusing on the third-generation semiconductors.

Production & Supply

Production & supply of SiC substrates are rising. Bulk of the total production is consumed in the consumer electronics and automotive industry. During the COVID-19 outbreak, the supply chain was disrupted, as global lockdown was imposed by governments. This caused the shutdown of manufacturing plants, which impeded the growth of the SiC substrate market during the pandemic.

Government Regulations

Political factors influence regulations and laws that indirectly affect the market. Governments, along with many regulatory bodies, are concerned with environmental factors and established stringent rules and regulations regarding the manufacture and production of SiC substrates, as it causes health hazards to the workers manufacturing SiC substrates in developing countries.

Furthermore, governments and key market players are continuously funding the advancement of products through SiC substrates, which is estimated to drive the market.

SiC Substrates Market Dynamics

Market Driver

• Growing demand for SiC in power electronics

Growing demand for SiC in power electronics is expected to boost the market during the forecast period. Numerous power devices are available in the power electronics industry, which convert alternating current to direct current (or vice versa) in the systems.

Additionally, these are designed to minimize energy loss and increase efficiency. SiC devices, such as SiC diodes and modules, are compound semiconductors composed of silicon and carbide. SiC is an alternative to silicon-based electronics components, especially in wide bandgap applications.

The material is small in size, light in weight, and low in cost. Tesla, a US-based manufacturer of electric vehicles, first adopted the third-generation semiconductor silicon carbide (SiC). Its silicon carbide product allows SiC power components to perform heat dissipation and improve the performance of electric vehicles.

• Rising applications of SiC devices in semiconductor industry

Increasing demand for SiC devices in the semiconductor industry for numerous applications, such as RF and cellular-base station applications, power supplies, and inverters, is fueling the market in the coming years. Additionally, these devices are used in high-power applications, owing to their high switching speed.

Several advantages of silicon carbide devices over silicon devices, such as high bandwidth, high thermal conductivity, high breakdown field strength, and high electron saturation drift rate, make it suitable for high-temperature, high-power, miniaturized power semiconductor devices under severe conditions such as high voltage, high frequency, and radiation. It can effectively break through the phySiCal limits of traditional silicon-based power semiconductor devices and their materials.

Market Restraint

• High material cost and fabrication cost of SiC devices

SiC materials are commercially synthesized under high-temperature environments. These materials are costlier than Si raw material. Silicon is easily extracted from silica that occurs naturally. During fabrication of the device, several factors play a role in making it costlier for companies, such as presence of less number of foundries and fabrication facilities.

Moreover, final phases, such as assembly, testing, and packaging, entail high costs, due to the lack of advanced technology-based suitable equipment.

• Technological defects hamper the market

In SiC materials, especially crystals, micro-sized holes known as micropipes are found across the crystals. SiC devices are susceptible to various defects such as dislocations, prototype inclusions, and stacking faults during the manufacture of large wafers. These defects occur, due to a non-optimal balance of silicon and carbon precursors, and local instability in pressure or temperature. These defects affect the device efficiency and degrade their electrical characteristics.

Market Opportunity

• Development of SiC power diodes

Silicon carbide (SiC) is a widely used material for the production of medium to high voltage power semiconductors, due to its inherent properties of wide band gap and high thermal conductivity. Presently, SiC Schottky Diodes are extensively used as SiC power devices. Previously, SiC Schottky diodes used a pure Schottky Barrier Diode (SBD) structure. A new diode called Junction Barrier Schottky (JBS) with low reverse leakage current was introduced.

The latest structure is called Merged PN Schottky (MPS), which is registering a massive surge in current handling capabilities. The reverse recovery characteristic of silicon carbide Schottky diode is almost zero, which makes it applicable in many PFC circuits Broad.

For example, the use of 650V/10A silicon carbide Schottky diodes in a 3kW high-efficiency communication power supply bridgeless interleaved PFC circuit helps customers fulfill high-tech requirements with full-load efficiency greater than or equal to 95%.

• Growing Opportunities for Market Players in Semiconductor Industry

The Government of India launched various schemes to promote the production of electronics in India, such as the scheme for promotion of manufacturing electronic components and semiconductors (SPECS), the scheme for modified electronics manufacturing clusters (EMC 2.0), and the Production Linked Incentive (PLI).

The India Electronics and Semiconductor Association (IESA) signed an MoU with the Singapore Semiconductor Industry Association (SSIA) to establish and develop trade and technical cooperation between the electronics and semiconductor industries in these countries. This is expected to increase developments in semiconductor manufacturing technologies, which is expected to increase the scope for the consumption of SiC in semiconductor manufacturing in India.

Scope of SiC Substrates Market Report

The report on the global SiC Substrates Market includes an assessment of the market, trends, segments, and regional markets. Overview and dynamics have also been included in the report.

SiC Substrates Market Segmental Outlook

The Global SiC Substrates Market is segmented on the basis of by type and by end-use industry.
Based on type, the global SiC Substrates Market is divided into Semi-insulating SiC Substrates, Conductive SiC Substrates. The semi-insulating SiC substrates segment is anticipated to dominate the market.

According to the principle of increasing resistivity, there are two types of semi insulating SiC is available one is doping semi insulation, which is further compensated with impurity V, and high purity semi insulating SiC. However, further technology is required for the production of high purity semi-insulating SiC.

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By end use industry the global SiC Substrates Market is segmented into Consumer Electronics, Automotive, Energy & Power, IT & Telecommunication, Aerospace & Defense, and Others. The consumer electronics segment is projected to dominate the market during the forecast period. The growth of the segment is attributed to the ongoing adoption of SiC substrate-based semiconductors in consumer electronics such as mobile phones, laptops, and LED lighting.

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Regional Outlook

Based on regions, the market is classified as North America, Europe, Asia Pacific, Latin America, and Middle East & Africa.

The market in the Asia Pacific is projected to expand at a significant CAGR during the forecast period owing to the growing semiconductor industry and usage of SiC substrates in semiconductor devices.

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Key Benefits for Industry Participants & Stakeholders

• In-depth Analysis of the global SiC Substrates Market
• Historical, Current, and Projected Market Size in terms of Value and Volume
• Potential & Niche Segments and Regions Exhibiting Promising Growth Covered
• Industry Drivers, Restraints, and Opportunities Covered in the Study
• Recent Industry Trends and Developments
• Competitive Landscape & Strategies of Key Players
• Neutral Perspective on Global SiC Substrates Market