Semiconductor Silicon Carbide Electronic Power Device Market Size, Share, Industry Report [2032]

Semiconductor Silicon Carbide Electronic Power Device Market Size, Share, Industry Report [2032]

Segments - by Device Type (MOSFET, Diodes, Module, Others), by Wafer Size (2-inch, 4-inch, 6-inch, 8-inch, Others), by Application (Automotive, Industrial, Energy & Power, Consumer Electronics, Aerospace & Defense, Others), by Voltage Range (Low Voltage, Medium Voltage, High Voltage), by End-user (OEMs and Aftermarket)

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Report Description


Semiconductor Silicon Carbide Electronic Power Device Market Outlook 2032

The global semiconductor silicon carbide electronic power device market size was USD 41,205 million in 2023 and is likely to reach USD 94,860 million by 2032, expanding at a CAGR of 4.3% during 2024–2032. The market growth is attributed to the smart SiC modules.

Silicon carbide (SiC) is a wide bandgap semiconductor material composed of silicon and carbon atoms. Unlike traditional silicon, SiC has exceptional physical and electrical properties, making it ideal for high-power, high-temperature, and high-frequency applications. It is especially suited for use in electronic power devices such as MOSFETs, diodes, and power modules. As industries demand compact, efficient, and durable power solutions, SiC has emerged as a critical material driving innovation in advanced electronics.

Semiconductor Silicon Carbide Electronic Power Device Market Outlook

Smart SiC power modules represent the next wave of innovation, combining traditional SiC devices with embedded intelligence such as sensors, diagnostics, and control logic. These modules enable real-time monitoring of temperature, voltage, and current, allowing for predictive maintenance and optimized performance. In applications such as EVs and industrial drives, smart modules enhance reliability, extend device lifespan, and improve system efficiency. This integration of hardware with intelligent software aligns with the growing trend toward digitalized power electronics and energy management systems.

Semiconductor Silicon Carbide Electronic Power Device Market Dynamics

Semiconductor Silicon Carbide Electronic Power Device Market Dyanmics

Major Drivers

Rising adoption of electric mobility is one of the most significant drivers of the semiconductor SiC power device market. Electric vehicles require power electronics that handle high voltages and operate efficiently over wide temperature ranges capabilities that SiC components excel at. SiC MOSFETs and diodes enable faster charging, longer driving ranges, and lighter vehicle architectures by reducing power losses and improving system performance. As automakers ramp up EV production and invest in next-gen drivetrains, demand for SiC-based devices is growing rapidly.

Across industries, there's a growing emphasis on reducing energy consumption and operational costs, driving demand for energy-efficient electronic systems. SiC devices provide higher efficiency in power conversion processes, which is essential in sectors such as industrial automation, data centers, and consumer electronics. Their ability to minimize switching and conduction losses leads to reduced heat generation and smaller cooling requirements, making them a preferred choice for manufacturers focused on sustainable, high-performance solutions.

The expansion of renewable energy projects worldwide is fueling the need for efficient and reliable power electronics to manage fluctuating energy input and conversion. SiC devices play a key role in improving the performance of solar inverters, wind turbine converters, and energy storage systems. Their high-voltage handling and efficiency help maximize the energy harvested and minimize transmission losses, making them critical for achieving grid stability and optimal energy delivery in renewable energy ecosystems.

Stringent environmental policies and carbon reduction goals set by governments around the world are accelerating the adoption of clean technologies powered by SiC. Regulatory mandates encouraging electric mobility, renewable energy integration, and efficient energy use are pushing industries to switch from traditional silicon to SiC-based power solutions. Incentives such as subsidies, tax credits, and R&D funding are further supporting the development and deployment of SiC technologies in both the public and private sectors.

Improvements in SiC material processing, wafer fabrication, and device packaging are making SiC accessible and cost-effective. Innovations such as 6-inch and 8-inch wafer production, reduced defect densities, and better thermal interfaces have significantly enhanced device quality and scalability. These advancements are helping manufacturers meet the growing demand across industries while reducing production costs, thereby accelerating the commercialization and widespread adoption of SiC power devices.

Existing Restraints

High cost of production and raw materials hinders the semiconductor SiC electronic power devices market. SiC wafers are more expensive to produce than traditional silicon due to the complex manufacturing processes involved, such as high-temperature crystal growth and precise slicing techniques. Additionally, the tooling, equipment, and infrastructure required for SiC fabrication are costly, often limiting adoption among small and mid-sized manufacturers. These elevated costs impact profit margins and delay broader market penetration despite the material's performance advantages.

The limited availability of high-quality, defect-free SiC wafers remain constrained, creating a bottleneck in the production of reliable power devices. Producing SiC crystals with the necessary purity and consistency are technically challenging and time-consuming, leading to limited yields and long lead times. This scarcity inflates prices and restricts the ability of manufacturers to scale up production quickly. As demand rises across industries such as EVs and renewable energy, the shortage of high-grade wafers poses a serious obstacle to meeting market needs.

Competition from silicon-based and GaN technologies hampers the market. Despite the superior performance of SiC, it faces stiff competition from both advanced silicon solutions and gallium nitride (GaN) technologies. Silicon remains the most mature and cost-effective semiconductor material, with a well-established supply chain and widespread familiarity. Meanwhile, GaN is emerging as a viable alternative in low-to-medium voltage applications due to its high efficiency and cost advantages. SiC continues to prove its value proposition particularly in high-voltage, high-power segments while overcoming these competitive pressures.

Emerging Opportunities

Expansion into aerospace and defense sectors presents a significant growth opportunity for SiC power devices due to their need for high-efficiency, compact, and rugged electronics. SiC’s ability to operate at high temperatures, withstand radiation, and deliver superior power density makes it ideal for applications such as satellite power systems, avionics, radar systems, and electric aircraft. As these industries increasingly adopt electrification and prioritize lightweight components, SiC is poised to become a cornerstone material for advanced military and aerospace-grade power solutions.

Growing EV charging infrastructure is expected to create lucrative opportunities for the market players. As electric vehicle adoption accelerates globally, there is a parallel demand for fast, reliable, and efficient EV charging infrastructure, an area where SiC shines. SiC-based power devices enable high-speed charging with reduced energy losses and compact charger designs. Their high thermal conductivity and efficiency make them particularly well-suited for fast DC chargers, which are critical to reducing charging times and increasing EV convenience. The global build-out of charging stations, especially in urban areas and along highways, opens a vast market for SiC device integration.

Technological progress in producing larger SiC wafers specifically 6-inch and 8-inch formats is a game-changer for the industry. These advancements allow manufacturers to increase output, reduce per-device costs, and scale up to meet the growing demand from sectors such as EVs, renewables, and industrial automation. Larger wafers enable efficient fabrication processes and better yield rates. As these sizes become the industry standard, the cost-effectiveness and accessibility of SiC devices are expected to improve significantly, accelerating adoption across a broader range of applications.

Expansion in emerging economies, particularly in Southeast Asia and South America, are witnessing rapid industrialization, urbanization, and infrastructure development all of which demand efficient power management solutions. Governments in these regions are investing in renewable energy, EV policies, and grid modernization, creating a fertile ground for SiC technology adoption. As local industries seek to improve energy efficiency and integrate advanced electronics, SiC devices offer an attractive solution, positioning these regions as high-potential growth markets for global SiC manufacturers.

Scope of the Semiconductor Silicon Carbide Electronic Power Device Market Report

The market report includes an assessment of the market trends, segments, and regional markets. Overview and dynamics have also been included in the report.

Attributes

Details

Report Title

Semiconductor Silicon Carbide Electronic Power Device Market - Global Industry Analysis, Growth, Share, Size, Trends, and Forecast

Base Year

2023

Historic Data

2017 -2022

Forecast Period

2024–2032

Segmentation

Device Type (MOSFET, Diodes, Module, and Others), Wafer Size (2-inch, 4-inch, 6-inch, 8-inch, and Others), Application (Automotive, Industrial, Energy & Power, Consumer Electronics, Aerospace & Defense, and Others), Voltage Range (Low Voltage, Medium Voltage, and High Voltage), and End-user (OEMs and Aftermarket)

Regional Scope

Asia Pacific, North America, Latin America, Europe, and Middle East & Africa

Report Coverage

Company Share, Market Analysis and Size, Competitive Landscape, Growth Factors, Market Trends, and Revenue Forecast

Key Players Covered in the Report

Wolfspeed (Cree), Infineon Technologies, STMicroelectronics, ON Semiconductor, TOSHIBA CORPORATION, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., General Electric Company, and Rohm Semiconductor


Regional Outlook

Asia Pacific is the dominant market for semiconductor silicon carbide (SiC) electronic power devices across the globe, primarily driven by its robust manufacturing hubs, high demand for electric vehicles (EVs), and strong industrial presence. Countries such as China, Japan, and South Korea are leading the way in SiC device production and adoption, with numerous global semiconductor manufacturers and OEMs establishing facilities in the region. China, in particular, is investing heavily in EV production, contributing significantly to the demand for SiC power devices in traction inverters, chargers, and other power electronics. Additionally, the rapid industrialization and adoption of renewable energy technologies in countries such as India and Southeast Asian nations are further propelling SiC adoption in power grids and energy systems. The region's massive production capacity and growing demand for high-efficiency power electronics make Asia Pacific the largest market for SiC devices.

North America is a key region for technological innovation and development in the semiconductor silicon carbide (SiC) electronic power device market. The US is a major driver, with significant investments in research, development, and the scaling of SiC technology for electric vehicles, renewable energy, and defense applications. North American companies, such as Cree (Wolfspeed), are at the forefront of SiC production, pushing the boundaries of efficiency and device performance. The automotive industry in the US is heavily adopting SiC-based power devices for electric vehicles, especially in the production of inverters and fast-charging solutions. Additionally, SiC devices are gaining traction in defense applications due to their ability to operate efficiently in extreme environments. This region is witnessing a surge in the demand for high-performance power devices, and the technological advancements continue to drive market growth in the coming years.

Europe plays a significant role in the growth of the semiconductor silicon carbide (SiC) electronic power device market, with a strong focus on automotive and renewable energy applications. The European automotive sector, particularly in countries such as Germany, is embracing SiC for its electric vehicle production, including inverters, chargers, and powertrains, due to SiC's ability to provide higher efficiency and reduce power losses. Additionally, Europe’s aggressive goals for renewable energy adoption, such as wind and solar, are contributing to the demand for SiC devices in energy conversion and grid management systems. With initiatives to increase the use of electric mobility and energy-efficient systems, Europe is set to experience steady growth in the SiC market, particularly in energy-efficient power electronics and green technologies.

Semiconductor Silicon Carbide Electronic Power Device Market Region


Semiconductor Silicon Carbide Electronic Power Device Market Insights

Device Type Segment Insights

SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) represent the largest and most rapidly growing segment within the device type category. These devices are widely adopted in electric vehicles, renewable energy systems, and industrial power supplies due to their ability to switch at higher frequencies and withstand high temperatures and voltages more efficiently than traditional silicon MOSFETs. SiC MOSFETs accounted for a substantial share of the overall market, driven by the surge in EV production and the demand for high-efficiency onboard chargers, traction inverters, and powertrains. The segment growth is further attributed to their increasing integration in fast-charging infrastructure and smart grid technologies. Major manufacturers such as Infineon, Wolfspeed, and STMicroelectronics have ramped up their SiC MOSFET production capacity, anticipating a multi-billion-dollar demand spike by 2030. These developments position SiC MOSFETs as the central force driving revenue and innovation in the market.

SiC power modules are the second most dominant segment, gaining significant traction due to their integrated and compact structure that combines multiple SiC devices into a single, high-efficiency package. These modules are heavily utilized in high-power applications such as rail traction systems, electric vehicle drivetrains, solar inverters, and industrial motor drives. Their design minimizes parasitic inductance and improves thermal performance, making them ideal for compact, high-density power systems. The power module segment has witnessed accelerated growth, with a notable increase in adoption across the EV and energy sectors. In particular, automakers are favoring SiC-based modules for their potential to improve range and charging efficiency in electric vehicles. The segment is poised to register a strong double-digit growth rate in specific regions such as Asia-Pacific, where EV and industrial electrification initiatives are scaling rapidly. Market leaders such as Mitsubishi Electric and Rohm Semiconductor are investing heavily in module-level innovations and manufacturing scale-ups, further underscoring this segment’s pivotal role in the overall market trajectory.

Wafer Size Segment Insights

The 6-inch wafer segment has become the leading segment in the semiconductor SiC electronic power device market, primarily driven by advancements in wafer manufacturing technologies and the growing demand for high-efficiency power devices. 6-inch wafers account for a substantial portion of the overall SiC wafer production due to their balance between cost-effectiveness and high-volume manufacturing potential. SiC power devices fabricated on 6-inch wafers are widely used in industries such as electric vehicles, renewable energy, and industrial power systems. This segment is growing rapidly, with manufacturers such as Cree (Wolfspeed) and STMicroelectronics scaling up their production capabilities to meet the rising demand. The CAGR for the 6-inch wafer segment is forecasted to be strong over the next decade, with the automotive sector, in particular, being a major contributor to growth as automakers increasingly adopt SiC power devices for EV powertrains and fast-charging solutions. The 6-inch wafer remains a sweet spot for manufacturers as it provides a balance between yield, cost, and performance, making it highly favorable for large-scale production.

The 8-inch wafer segment is the fastest-growing in the market, driven by the continued technological improvements in SiC crystal growth and wafer processing. These larger wafers offer greater economies of scale, allowing for devices to be produced from a single wafer, which significantly reduces the per-device cost. SiC device manufacturers have made significant strides in 8-inch wafer development, and several key industry players, such as Wolfspeed, have already begun production at 8-inch fabs. The 8-inch wafer segment is expected to experience robust growth, especially as demand for SiC devices continues to rise in high-power applications such as electric vehicles, solar inverters, and industrial motor drives. The 8-inch wafer's cost efficiency and ability to handle higher volumes make it the preferred choice for manufacturers scaling production to meet the global demand for energy-efficient solutions. The segment growth is further attributed to its growth fueled by higher efficiency requirements and the push for greater integration in power electronics.

Semiconductor Silicon Carbide Electronic Power Device Market Wafer Size

Application Segment Insights

The automotive sector is the largest and fastest-growing application for SiC power devices. As the global automotive industry shifts toward EVs, SiC-based power devices, particularly MOSFETs and diodes, have become critical for improving the efficiency and performance of electric drivetrains, charging infrastructure, and energy management systems. SiC power devices enable high-voltage, high-frequency switching with minimal losses, making them ideal for electric vehicle inverters, onboard chargers, and DC-DC converters, which are essential components for EV powertrains. This segment's growth is fueled by the rising demand for EVs, with major automakers such as Tesla, Volkswagen, and General Motors incorporating SiC devices into their EV production. The segment accounted for a substantial percentage of the SiC market share, and the segment is expected to grow at a CAGR significantly higher than the market average, as EV adoption accelerates globally. Additionally, the growing adoption of SiC in fast-charging stations further bolsters this segment, positioning automotive applications as a core driver of market expansion over the next decade.

The energy & power sector is another major application area for SiC devices, driven by the increasing global demand for efficient, reliable, and sustainable energy solutions. SiC power devices are essential in applications such as solar inverters, wind power converters, energy storage systems, and grid infrastructure. Their ability to operate at higher voltages and frequencies with greater efficiency compared to traditional silicon devices makes SiC ideal for improving the overall performance and efficiency of energy systems. In particular, SiC devices reduce power losses, improve thermal management, and help enable faster switching, which is crucial for maximizing energy conversion efficiency in renewable energy systems. The adoption of SiC in energy and power applications is growing steadily, with market reports indicating that the sector witness strong double-digit growth rates over the next decade. As countries push for greener energy solutions and modernize their energy grids, the demand for SiC-based devices in these applications continues to rise, contributing significantly to the overall market's expansion.

Voltage Range Segment Insights

The high voltage segment is the largest and most significant within the semiconductor SiC electronic power device market, driven primarily by its applications in industries such as electric vehicles, energy transmission, industrial equipment, and renewable energy. SiC devices offer superior efficiency in high-voltage applications compared to traditional silicon devices, as they are capable of handling voltages above 1,200V, an essential characteristic for many high-power applications. In the electric vehicle sector, SiC MOSFETs are increasingly used in traction inverters, where high-voltage switching is required for optimal energy conversion and performance. Additionally, SiC's ability to withstand higher temperatures and reduce power losses makes it ideal for power grids, transmission lines, and industrial motor drives, which demand high-voltage operation. This segment is expected to see strong growth in the coming years, driven by the global push for renewable energy integration, grid modernization, and the increasing adoption of electric vehicles, with forecasts indicating a significant increase in market share for high-voltage SiC devices.

The medium voltage segment is another key area for SiC devices, particularly in industrial applications, automotive systems, and energy conversion equipment. SiC power devices in the medium voltage range (typically 600V to 1,200V) are extensively used in systems such as industrial motor drives, power supplies for renewable energy systems, and energy storage systems. These devices help improve efficiency, reduce energy consumption, and minimize heat generation in systems that require medium voltage levels for power conversion and transmission. With their high efficiency and smaller size compared to traditional silicon-based devices, SiC devices in medium voltage applications are becoming the go-to solution for industries looking to reduce operational costs and improve performance. This segment is growing rapidly, driven by the increasing demand for energy-efficient and cost-effective solutions across industrial sectors, and it is projected to maintain a strong CAGR over the next decade, particularly as industrial automation and renewable energy solutions expand.

Semiconductor Silicon Carbide Electronic Power Device Market Voltage Range

End-user Segment Insights

The original equipment manufacturers (OEM) segment is the leading end-user category for semiconductor SiC electronic power devices. OEMs, which include companies that design and manufacture complete systems, are driving the demand for SiC devices due to their ability to integrate SiC technology into new, high-efficiency power electronics. This segment includes automotive manufacturers, industrial equipment producers, and renewable energy system developers, among others. OEMs are increasingly adopting SiC technology in applications such as electric vehicles, solar inverters, and industrial motor drives. SiC power devices are critical for improving energy efficiency, reducing power losses, and enabling faster switching, which are crucial factors in these applications. The automotive sector, in particular, is one of the largest contributors to the growth of SiC demand, with automakers incorporating SiC in electric vehicle (EV) powertrains, onboard chargers, and fast-charging stations. OEMs represent the largest share of the market, with this segment expected to grow rapidly over the next decade, driven by the expansion of electric vehicle production and the increasing electrification of industrial systems.

The aftermarket segment is the second most significant end-user category, which includes maintenance, repair, and upgrade of existing systems. Aftermarket demand for SiC devices is driven by the need for upgrading older power electronics systems to achieve higher efficiency, reduced operational costs, and better performance. The growing focus on retrofitting and replacing older silicon-based devices with SiC in various applications, such as industrial equipment, renewable energy systems, and EV charging infrastructure, is a key driver of this segment's growth. As industries seek to maximize the performance of their existing infrastructure, the demand for SiC devices in the aftermarket is expected to increase steadily. Particularly in the renewable energy sector, upgrades to existing solar inverters and power converters with SiC devices are becoming increasingly common. While the aftermarket segment is smaller compared to OEMs, it continues to grow, driven by the demand for efficient and durable components in aging systems that are being modernized for better performance and energy savings.

Segments

The semiconductor silicon carbide electronic power device market has been segmented on the basis of

Device Type

  • MOSFET
  • Diodes
  • Module
  • Others

Wafer Size

  • 2-inch
  • 4-inch
  • 6-inch
  • 8-inch
  • Others

Application

  • Automotive
  • Industrial
  • Energy & Power
  • Consumer Electronics
  • Aerospace & Defense
  • Others

Voltage Range

  • Low Voltage
  • Medium Voltage,
  • High Voltage

End-user

  • OEMs
  • Aftermarket

Region

  • Asia Pacific
  • North America
  • Latin America
  • Europe
  • Middle East & Africa

Key Players

  • Wolfspeed (Cree)
  • Infineon Technologies
  • STMicroelectronics
  • ON Semiconductor
  • TOSHIBA CORPORATION
  • Mitsubishi Electric Corporation
  • Fuji Electric Co., Ltd.
  • General Electric Company
  • Rohm Semiconductor

Competitive Landscape

The semiconductor silicon carbide (SiC) electronic power device market is highly competitive, with several key players leading the charge in innovation and market share. Some of the dominant companies in the market include Wolfspeed (Cree), Infineon Technologies, STMicroelectronics, ON Semiconductor, TOSHIBA CORPORATION, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., General Electric Company, and Rohm Semiconductor. These companies have established strong market positions due to their extensive R&D capabilities, broad product portfolios, and solid relationships with industries such as automotive, energy, and industrial sectors. Wolfspeed, for example, holds a significant share of the market due to its leadership in SiC MOSFETs and power modules, while Infineon and STMicroelectronics are key players in providing solutions for industrial power systems and electric vehicles. Collectively, these companies are vying for leadership as demand for SiC devices continues to grow across multiple high-performance applications.

Semiconductor Silicon Carbide Electronic Power Device Market Key layers

Table Of Content

Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Semiconductor Silicon Carbide Electronic Power Device  Market Overview
   4.1 Introduction
      4.1.1 Market Taxonomy
      4.1.2 Market Definition
      4.1.3 Macro-Economic Factors Impacting the Market Growth
   4.2 Semiconductor Silicon Carbide Electronic Power Device  Market Dynamics
      4.2.1 Market Drivers
      4.2.2 Market Restraints
      4.2.3 Market Opportunity
   4.3 Semiconductor Silicon Carbide Electronic Power Device  Market - Supply Chain Analysis
      4.3.1 List of Key Suppliers
      4.3.2 List of Key Distributors
      4.3.3 List of Key Consumers
   4.4 Key Forces Shaping the Semiconductor Silicon Carbide Electronic Power Device  Market
      4.4.1 Bargaining Power of Suppliers
      4.4.2 Bargaining Power of Buyers
      4.4.3 Threat of Substitution
      4.4.4 Threat of New Entrants
      4.4.5 Competitive Rivalry
   4.5 Global Semiconductor Silicon Carbide Electronic Power Device  Market Size & Forecast, 2023-2032
      4.5.1 Semiconductor Silicon Carbide Electronic Power Device  Market Size and Y-o-Y Growth
      4.5.2 Semiconductor Silicon Carbide Electronic Power Device  Market Absolute $ Opportunity

Chapter 5 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast By Device Type
   5.1 Introduction
      5.1.1 Key Market Trends & Growth Opportunities By Device Type
      5.1.2 Basis Point Share (BPS) Analysis By Device Type
      5.1.3 Absolute $ Opportunity Assessment By Device Type
   5.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      5.2.1 MOSFET
      5.2.2 Diodes
      5.2.3 Module
      5.2.4 Others
   5.3 Market Attractiveness Analysis By Device Type

Chapter 6 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast By Wafer Size
   6.1 Introduction
      6.1.1 Key Market Trends & Growth Opportunities By Wafer Size
      6.1.2 Basis Point Share (BPS) Analysis By Wafer Size
      6.1.3 Absolute $ Opportunity Assessment By Wafer Size
   6.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      6.2.1 2-inch
      6.2.2 4-inch
      6.2.3 6-inch
      6.2.4 8-inch
      6.2.5 Others
   6.3 Market Attractiveness Analysis By Wafer Size

Chapter 7 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast By Application
   7.1 Introduction
      7.1.1 Key Market Trends & Growth Opportunities By Application
      7.1.2 Basis Point Share (BPS) Analysis By Application
      7.1.3 Absolute $ Opportunity Assessment By Application
   7.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      7.2.1 Automotive
      7.2.2 Industrial
      7.2.3 Energy & Power
      7.2.4 Consumer Electronics
      7.2.5 Aerospace & Defense
      7.2.6 Others
   7.3 Market Attractiveness Analysis By Application

Chapter 8 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast By Voltage Range
   8.1 Introduction
      8.1.1 Key Market Trends & Growth Opportunities By Voltage Range
      8.1.2 Basis Point Share (BPS) Analysis By Voltage Range
      8.1.3 Absolute $ Opportunity Assessment By Voltage Range
   8.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      8.2.1 Low Voltage
      8.2.2 Medium Voltage
      8.2.3 High Voltage
   8.3 Market Attractiveness Analysis By Voltage Range

Chapter 9 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast By End-user
   9.1 Introduction
      9.1.1 Key Market Trends & Growth Opportunities By End-user
      9.1.2 Basis Point Share (BPS) Analysis By End-user
      9.1.3 Absolute $ Opportunity Assessment By End-user
   9.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      9.2.1 OEMs and Aftermarket
   9.3 Market Attractiveness Analysis By End-user

Chapter 10 Global Semiconductor Silicon Carbide Electronic Power Device  Market Analysis and Forecast by Region
   10.1 Introduction
      10.1.1 Key Market Trends & Growth Opportunities By Region
      10.1.2 Basis Point Share (BPS) Analysis By Region
      10.1.3 Absolute $ Opportunity Assessment By Region
   10.2 Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Region
      10.2.1 North America
      10.2.2 Europe
      10.2.3 Asia Pacific
      10.2.4 Latin America
      10.2.5 Middle East & Africa (MEA)
   10.3 Market Attractiveness Analysis By Region

Chapter 11 Coronavirus Disease (COVID-19) Impact 
   11.1 Introduction 
   11.2 Current & Future Impact Analysis 
   11.3 Economic Impact Analysis 
   11.4 Government Policies 
   11.5 Investment Scenario

Chapter 12 North America Semiconductor Silicon Carbide Electronic Power Device  Analysis and Forecast
   12.1 Introduction
   12.2 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast by Country
      12.2.1 U.S.
      12.2.2 Canada
   12.3 Basis Point Share (BPS) Analysis by Country
   12.4 Absolute $ Opportunity Assessment by Country
   12.5 Market Attractiveness Analysis by Country
   12.6 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      12.6.1 MOSFET
      12.6.2 Diodes
      12.6.3 Module
      12.6.4 Others
   12.7 Basis Point Share (BPS) Analysis By Device Type 
   12.8 Absolute $ Opportunity Assessment By Device Type 
   12.9 Market Attractiveness Analysis By Device Type
   12.10 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      12.10.1 2-inch
      12.10.2 4-inch
      12.10.3 6-inch
      12.10.4 8-inch
      12.10.5 Others
   12.11 Basis Point Share (BPS) Analysis By Wafer Size 
   12.12 Absolute $ Opportunity Assessment By Wafer Size 
   12.13 Market Attractiveness Analysis By Wafer Size
   12.14 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      12.14.1 Automotive
      12.14.2 Industrial
      12.14.3 Energy & Power
      12.14.4 Consumer Electronics
      12.14.5 Aerospace & Defense
      12.14.6 Others
   12.15 Basis Point Share (BPS) Analysis By Application 
   12.16 Absolute $ Opportunity Assessment By Application 
   12.17 Market Attractiveness Analysis By Application
   12.18 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      12.18.1 Low Voltage
      12.18.2 Medium Voltage
      12.18.3 High Voltage
   12.19 Basis Point Share (BPS) Analysis By Voltage Range 
   12.20 Absolute $ Opportunity Assessment By Voltage Range 
   12.21 Market Attractiveness Analysis By Voltage Range
   12.22 North America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      12.22.1 OEMs and Aftermarket
   12.23 Basis Point Share (BPS) Analysis By End-user 
   12.24 Absolute $ Opportunity Assessment By End-user 
   12.25 Market Attractiveness Analysis By End-user

Chapter 13 Europe Semiconductor Silicon Carbide Electronic Power Device  Analysis and Forecast
   13.1 Introduction
   13.2 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast by Country
      13.2.1 Germany
      13.2.2 France
      13.2.3 Italy
      13.2.4 U.K.
      13.2.5 Spain
      13.2.6 Russia
      13.2.7 Rest of Europe
   13.3 Basis Point Share (BPS) Analysis by Country
   13.4 Absolute $ Opportunity Assessment by Country
   13.5 Market Attractiveness Analysis by Country
   13.6 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      13.6.1 MOSFET
      13.6.2 Diodes
      13.6.3 Module
      13.6.4 Others
   13.7 Basis Point Share (BPS) Analysis By Device Type 
   13.8 Absolute $ Opportunity Assessment By Device Type 
   13.9 Market Attractiveness Analysis By Device Type
   13.10 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      13.10.1 2-inch
      13.10.2 4-inch
      13.10.3 6-inch
      13.10.4 8-inch
      13.10.5 Others
   13.11 Basis Point Share (BPS) Analysis By Wafer Size 
   13.12 Absolute $ Opportunity Assessment By Wafer Size 
   13.13 Market Attractiveness Analysis By Wafer Size
   13.14 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      13.14.1 Automotive
      13.14.2 Industrial
      13.14.3 Energy & Power
      13.14.4 Consumer Electronics
      13.14.5 Aerospace & Defense
      13.14.6 Others
   13.15 Basis Point Share (BPS) Analysis By Application 
   13.16 Absolute $ Opportunity Assessment By Application 
   13.17 Market Attractiveness Analysis By Application
   13.18 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      13.18.1 Low Voltage
      13.18.2 Medium Voltage
      13.18.3 High Voltage
   13.19 Basis Point Share (BPS) Analysis By Voltage Range 
   13.20 Absolute $ Opportunity Assessment By Voltage Range 
   13.21 Market Attractiveness Analysis By Voltage Range
   13.22 Europe Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      13.22.1 OEMs and Aftermarket
   13.23 Basis Point Share (BPS) Analysis By End-user 
   13.24 Absolute $ Opportunity Assessment By End-user 
   13.25 Market Attractiveness Analysis By End-user

Chapter 14 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Analysis and Forecast
   14.1 Introduction
   14.2 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast by Country
      14.2.1 China
      14.2.2 Japan
      14.2.3 South Korea
      14.2.4 India
      14.2.5 Australia
      14.2.6 South East Asia (SEA)
      14.2.7 Rest of Asia Pacific (APAC)
   14.3 Basis Point Share (BPS) Analysis by Country
   14.4 Absolute $ Opportunity Assessment by Country
   14.5 Market Attractiveness Analysis by Country
   14.6 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      14.6.1 MOSFET
      14.6.2 Diodes
      14.6.3 Module
      14.6.4 Others
   14.7 Basis Point Share (BPS) Analysis By Device Type 
   14.8 Absolute $ Opportunity Assessment By Device Type 
   14.9 Market Attractiveness Analysis By Device Type
   14.10 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      14.10.1 2-inch
      14.10.2 4-inch
      14.10.3 6-inch
      14.10.4 8-inch
      14.10.5 Others
   14.11 Basis Point Share (BPS) Analysis By Wafer Size 
   14.12 Absolute $ Opportunity Assessment By Wafer Size 
   14.13 Market Attractiveness Analysis By Wafer Size
   14.14 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      14.14.1 Automotive
      14.14.2 Industrial
      14.14.3 Energy & Power
      14.14.4 Consumer Electronics
      14.14.5 Aerospace & Defense
      14.14.6 Others
   14.15 Basis Point Share (BPS) Analysis By Application 
   14.16 Absolute $ Opportunity Assessment By Application 
   14.17 Market Attractiveness Analysis By Application
   14.18 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      14.18.1 Low Voltage
      14.18.2 Medium Voltage
      14.18.3 High Voltage
   14.19 Basis Point Share (BPS) Analysis By Voltage Range 
   14.20 Absolute $ Opportunity Assessment By Voltage Range 
   14.21 Market Attractiveness Analysis By Voltage Range
   14.22 Asia Pacific Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      14.22.1 OEMs and Aftermarket
   14.23 Basis Point Share (BPS) Analysis By End-user 
   14.24 Absolute $ Opportunity Assessment By End-user 
   14.25 Market Attractiveness Analysis By End-user

Chapter 15 Latin America Semiconductor Silicon Carbide Electronic Power Device  Analysis and Forecast
   15.1 Introduction
   15.2 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast by Country
      15.2.1 Brazil
      15.2.2 Mexico
      15.2.3 Rest of Latin America (LATAM)
   15.3 Basis Point Share (BPS) Analysis by Country
   15.4 Absolute $ Opportunity Assessment by Country
   15.5 Market Attractiveness Analysis by Country
   15.6 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      15.6.1 MOSFET
      15.6.2 Diodes
      15.6.3 Module
      15.6.4 Others
   15.7 Basis Point Share (BPS) Analysis By Device Type 
   15.8 Absolute $ Opportunity Assessment By Device Type 
   15.9 Market Attractiveness Analysis By Device Type
   15.10 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      15.10.1 2-inch
      15.10.2 4-inch
      15.10.3 6-inch
      15.10.4 8-inch
      15.10.5 Others
   15.11 Basis Point Share (BPS) Analysis By Wafer Size 
   15.12 Absolute $ Opportunity Assessment By Wafer Size 
   15.13 Market Attractiveness Analysis By Wafer Size
   15.14 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      15.14.1 Automotive
      15.14.2 Industrial
      15.14.3 Energy & Power
      15.14.4 Consumer Electronics
      15.14.5 Aerospace & Defense
      15.14.6 Others
   15.15 Basis Point Share (BPS) Analysis By Application 
   15.16 Absolute $ Opportunity Assessment By Application 
   15.17 Market Attractiveness Analysis By Application
   15.18 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      15.18.1 Low Voltage
      15.18.2 Medium Voltage
      15.18.3 High Voltage
   15.19 Basis Point Share (BPS) Analysis By Voltage Range 
   15.20 Absolute $ Opportunity Assessment By Voltage Range 
   15.21 Market Attractiveness Analysis By Voltage Range
   15.22 Latin America Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      15.22.1 OEMs and Aftermarket
   15.23 Basis Point Share (BPS) Analysis By End-user 
   15.24 Absolute $ Opportunity Assessment By End-user 
   15.25 Market Attractiveness Analysis By End-user

Chapter 16 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Analysis and Forecast
   16.1 Introduction
   16.2 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast by Country
      16.2.1 Saudi Arabia
      16.2.2 South Africa
      16.2.3 UAE
      16.2.4 Rest of Middle East & Africa (MEA)
   16.3 Basis Point Share (BPS) Analysis by Country
   16.4 Absolute $ Opportunity Assessment by Country
   16.5 Market Attractiveness Analysis by Country
   16.6 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Device Type
      16.6.1 MOSFET
      16.6.2 Diodes
      16.6.3 Module
      16.6.4 Others
   16.7 Basis Point Share (BPS) Analysis By Device Type 
   16.8 Absolute $ Opportunity Assessment By Device Type 
   16.9 Market Attractiveness Analysis By Device Type
   16.10 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Wafer Size
      16.10.1 2-inch
      16.10.2 4-inch
      16.10.3 6-inch
      16.10.4 8-inch
      16.10.5 Others
   16.11 Basis Point Share (BPS) Analysis By Wafer Size 
   16.12 Absolute $ Opportunity Assessment By Wafer Size 
   16.13 Market Attractiveness Analysis By Wafer Size
   16.14 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Application
      16.14.1 Automotive
      16.14.2 Industrial
      16.14.3 Energy & Power
      16.14.4 Consumer Electronics
      16.14.5 Aerospace & Defense
      16.14.6 Others
   16.15 Basis Point Share (BPS) Analysis By Application 
   16.16 Absolute $ Opportunity Assessment By Application 
   16.17 Market Attractiveness Analysis By Application
   16.18 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By Voltage Range
      16.18.1 Low Voltage
      16.18.2 Medium Voltage
      16.18.3 High Voltage
   16.19 Basis Point Share (BPS) Analysis By Voltage Range 
   16.20 Absolute $ Opportunity Assessment By Voltage Range 
   16.21 Market Attractiveness Analysis By Voltage Range
   16.22 Middle East & Africa (MEA) Semiconductor Silicon Carbide Electronic Power Device  Market Size Forecast By End-user
      16.22.1 OEMs and Aftermarket
   16.23 Basis Point Share (BPS) Analysis By End-user 
   16.24 Absolute $ Opportunity Assessment By End-user 
   16.25 Market Attractiveness Analysis By End-user

Chapter 17 Competition Landscape 
   17.1 Semiconductor Silicon Carbide Electronic Power Device  Market: Competitive Dashboard
   17.2 Global Semiconductor Silicon Carbide Electronic Power Device  Market: Market Share Analysis, 2023
   17.3 Company Profiles (Details – Overview, Financials, Developments, Strategy) 
      17.3.1 Wolfspeed (Cree)
      17.3.2 Infineon Technologies
      17.3.3 STMicroelectronics
      17.3.4 ON Semiconductor
      17.3.5 TOSHIBA CORPORATION
      17.3.6 Mitsubishi Electric Corporation
      17.3.7 Fuji Electric Co., Ltd.
      17.3.8 General Electric Company
      17.3.9 Rohm Semiconductor

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